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| 2N5238 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5238J) * JANTX level (2N5238JX) * JANTXV level (2N5238JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Applications * General purpose * Low power, High voltage * NPN silicon transistor Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 3111 Reference document: MIL-PRF-19500/394 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 100C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available TC = 25C unless otherwise specified Rating 170 200 10 10 1 5.7 5 50 .175 .020 -65 to +200 Unit Volts Volts Volts A W mW/C W mW/C C/W C RJA RJC TJ TSTG Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5238 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 1 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts TA = -55C IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A Symbol V(BR)CEO ICBO1 ICBO2 ICEO ICEX1 ICEX2 IEBO1 IEBO2 Test Conditions IC = 100 mA VCB = 200 Volts VCB = 80 Volts, VCE = 160 Volts VCE = 160Volts, VEB= .5Volts VCE = 160Volts, VEB= .5Volts, TA = 150C VEB = 7 Volts VEB = 5 Volts Min 170 10 100 10 10 100 10 100 Typ Max Units Volts A nA A A A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 50 40 10 20 Typ Max 225 120 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Delay Time Rise Time Storage Time Fall Time 1.5 2.5 0.6 2.5 Volts Volts Symbol |hFE| hFE COBO td tr ts tf Test Conditions VCE = 10 Volts, IC = 200 mA, f = 10 MHz VCE = 5 Volts, IC = 50 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min 1.5 40 Typ Max 7.5 250 350 Units pF IC = 5 A, IB = 500 mA, IC = 5 A, IB1=IB2 = 500 mA 50 500 1.5 500 ns s ns Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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